PART |
Description |
Maker |
MT55L512V18F MT55L256V32F MT55L256V36F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36
|
Maxim Integrated Products, Inc. Dallas Semiconductor
|
GS880F18AT-6I GS880F32AT-6I |
6ns 512K x 18 8Mb sync burst SRAM 6ns 256K x 32 8Mb sync burst SRAM
|
GSI Technology
|
IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM) 4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
DS2065W |
3.3V Single-Piece 8Mb Nonvolatile SRAM From old datasheet system
|
Maxim
|
N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|